參數(shù)資料
型號(hào): S29GL128P11TFI022
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù): 59/71頁(yè)
文件大?。?/td> 990K
代理商: S29GL128P11TFI022
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
57
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 11.13
Toggle Bit Timings (During Embedded Algorithms)
Note
A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle
Figure 11.14
DQ2 vs. DQ6
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system can use OE# or CE# to toggle DQ2 and DQ6.
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ2 and DQ6
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
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S29GL128P12TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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S29GL128P12TAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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