參數(shù)資料
型號(hào)： S29GL128P11TFI022
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術(shù)
文件頁數(shù)： 39/71頁
文件大?。?/td> 990K
代理商： S29GL128P11TFI022
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
37
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
8.
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations
in any or all sectors and can be implemented through software and/or hardware methods, which are
independent of each other. This section describes the various methods of protecting data stored in the
memory array. An overview of these methods in shown in
Figure 8.1
.
Figure 8.1
Advanced Sector Protection/Unprotection
Hardware Methods
Software Methods
WP#/ACC = V
IL
(Highe
s
t or Lowe
s
t
S
ector Locked)
P
ass
word Method
(DQ2)
Per
s
i
s
tent Method
(DQ1)
Lock Regi
s
ter
(One Time Progr
a
mm
ab
le)
PPB Lock Bit
1,2,
3
64-
b
it P
ass
word
(One Time Protect)
1 = PPB
s
Unlocked
0 = PPB
s
Locked
Memory Arr
a
y
S
ector 0
S
ector 1
S
ector 2
S
ector N-2
S
ector N-1
S
ector N
3
PPB 0
PPB 1
PPB 2
PPB N-2
PPB N-1
PPB N
Per
s
i
s
tent
Protection Bit
(PPB)
4,5
DYB 0
DYB 1
DYB 2
DYB N-2
DYB N-1
DYB N
Dyn
a
mic
Protection Bit
(DYB)
6,7,
8
6. 0 =
S
ector Protected,
1 =
S
ector Unprotected.
7. Protect effective only if PPB Lock Bit i
s
u
nlocked
a
nd corre
s
ponding PPB i
s
“1
”
(
u
nprotected).
8
. Vol
a
tile Bit
s
: def
au
lt
s
to
us
er choice
u
pon
power-
u
p (
s
ee ordering option
s
).
4. 0 =
S
ector Protected,
1 =
S
ector Unprotected.
5. PPB
s
progr
a
mmed individ
ua
lly,
bu
t cle
a
red collectively
1. Bit i
s
vol
a
tile,
a
nd def
au
lt
s
to
“
1
”
on re
s
et.
2. Progr
a
mming to
“
0
”
lock
s
a
ll PPB
s
to their
c
u
rrent
s
t
a
te.
3
. Once progr
a
mmed to
“
0
”
, re
qu
ire
s
h
a
rdw
a
re
re
s
et to
u
nlock.
3
. N = Highe
s
t Addre
ss
S
ector.
相關(guān)PDF資料
PDF描述
S29GL128P12TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P11TFI023 功能描述:閃存 128M, 3V, 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11TFIV10 功能描述:閃存 128MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11TFIV13 功能描述:閃存 128M 3.0V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11TFIV20 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays 制造商:Spansion 功能描述:SPZS29GL128P11TFIV20 IC 128M PAGE-MODE
S29GL128P11TFIV23 制造商:Spansion 功能描述:SPZS29GL128P11TFIV23 IC 128M PAGE-MODE
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