參數(shù)資料
型號： S29GL128P11TFI022
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術
文件頁數(shù)： 24/71頁
文件大?。?/td> 990K
代理商： S29GL128P11TFI022
22
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
Write data other than the “Confirm Command” after the specified number of “data load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “l(fā)ast address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
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S29GL128P12TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P12TAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL128P11TFI023 功能描述:閃存 128M, 3V, 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11TFIV10 功能描述:閃存 128MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11TFIV13 功能描述:閃存 128M 3.0V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P11TFIV20 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays 制造商:Spansion 功能描述:SPZS29GL128P11TFIV20 IC 128M PAGE-MODE
S29GL128P11TFIV23 制造商:Spansion 功能描述:SPZS29GL128P11TFIV23 IC 128M PAGE-MODE
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