參數(shù)資料
型號(hào): S29GL128N11FAIV13
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁數(shù): 72/100頁
文件大?。?/td> 952K
代理商: S29GL128N11FAIV13
70
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Figure 6. Toggle Bit Algorithm
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Note:
The system should recheck the toggle bit even if DQ5 =
1
because the toggle bit may stop toggling as DQ5 changes to
1
. See the subsections on DQ6 and DQ2 for more
information.
相關(guān)PDF資料
PDF描述
S29GL128N11FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV23 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI010 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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