參數(shù)資料
型號： S29GL128N11FAIV13
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁數(shù)： 57/100頁
文件大?。?/td> 952K
代理商： S29GL128N11FAIV13
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
55
D a t a S h e e t
Figure 2. Program Operation
Program Suspend/ Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or
a Write to Buffer programming operation so that data can be read from any non-suspended
sector. When the Program Suspend command is written during a programming process, the
device halts the program operation within 15 μs maximum (5
μs typical) and updates the sta-
tus bits. Addresses are not required when writing the Program Suspend command.
After the programming operation is suspended, the system can read array data from any
non-suspended sector. The Program Suspend command may also be issued during a pro-
gramming operation while an erase is suspended. In this case, data may be read from any
addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured
Silicon Sector area (One-time Program area), then user must use the proper command se-
quences to enter and exit this region.
Note that the Secured Silicon Sector autoselect, and
CFI functions are unavailable when program operation is in progress.
The system may also write the autoselect command sequence when the device is in the Pro-
gram Suspend mode. The system can read as many autoselect codes as required. When the
device exits the autoselect mode, the device reverts to the Program Suspend mode, and is
ready for another valid operation. See
Autoselect Command Sequence on page 51
for more
information.
After the Program Resume command is written, the device reverts to programming. The sys-
tem can determine the status of the program operation using the DQ7 or DQ6 status bits, just
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See
Table 12 on page 63
and
Table 14 on
page 65
for program command sequence.
相關(guān)PDF資料
PDF描述
S29GL128N11FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV23 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI010 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N11FFA010 制造商:Spansion 功能描述:
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S29GL128N11FFI020 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FFIIH0 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
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