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參數(shù)資料
| 型號： | S29GL128N11FAIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, FBGA-64 |
| 文件頁數(shù)： | 97/100頁 |
| 文件大小： | 952K |
| 代理商： | S29GL128N11FAIV10 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
95
D a t a S h e e t
Figure 11, “ Read Operation Timings,”
Added t
CEH
to figure.
Figure 12, “ Page Read Timings,”
Change A1-A0 to A2-A0.
Erase and Program Operations
Updated t
WHWH1
and t
WHWH2
with values.
Figure 16, “ Chip/ Sector Erase Operation Timings,”
Changed 5555h to 55h and 3030h to 30h.
Figure 17, “ Data# Polling Timings ( During Embedded Algorithms) ,”
Removed DQ15 and DQ14-DQ8
Added Note 2
Figure 18, “ Toggle Bit Timings ( During Embedded Algorithms) ,”
Changed DQ6 & DQ14/DQ2 & DQ10 to DQ2 and DQ6.
Alternate CE# Controlled Erase and Program Operations
Updated t
WHWH1
and t
WHWH2
with values.
Latchup Characteristics
Removed Table.
Erase and Programming Performance
Updated TBD with values.
Updated Note 1 and 2.
Physical Dimensions
Removed the reverse pinout information and note 3.
Revision A5 (September 29, 2004)
Performance Characteristics
Removed 80 ns.
Product Selector Guide
Updated values in tables.
Ordering I nformation
Created a family table.
Operating Ranges
Updated VIO.
CMOS Characteristics
Created a family table.
Read-Only Operations
Created a family table.
Hardw are Reset ( RESET# )
Created a family table.
Figure 13, “ Reset Timings,”
Added t
RH
to waveform.
Erase and Program Operations
Created a family table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128N11FAIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N11FFA010 | 制造商:Spansion 功能描述: |
| S29GL128N11FFA013 | 制造商:Spansion 功能描述: |
| S29GL128N11FFI010 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FFI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FFIIH0 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray |
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