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參數(shù)資料
| 型號： | S-22S12 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 1Kbits Non-Volatile CMOS RAM(1K位 CMOS非易失性RAM) |
| 中文描述： | 1Kbits非揮發(fā)性CMOS存儲器（每1000位的CMOS非易失性內(nèi)存） |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 77K |
| 代理商： | S-22S12 |
PARALLEL NON-VOLATILE RAM
S-22 Series
6
Seiko Instruments Inc.
4. Recall cycle
Operation Mode
Operation
1. Standby mode
When CS goes high, the S-22 Series enters into the standby mode: power consumption becomes lowest, and I/O1 to I/O4
are high impedance.
2. SRAM modes
2.1 Read mode
When CS is low and WE is high, the S-22 Series enters into the read mode: the SRAM data is output to I/O1 to I/O4.
2.2 Write mode
When CS and WE are low, the S-22 Series enters into the write mode: the data input in I/O1 to I/O4 is written to the
SRAM.
Parameter
Symbol
Min.
Typ.
Max
100
1100
Unit
Recall cycle time
Recall pulse width
Recall disable time
Recall enable time
Recall data access time
t
RCC
t
RCP
t
RCZ
t
ORC
t
ARC
1300
200
--
10
ns
ns
ns
ns
ns
Mode
Input
Input/output
CS
WE
RECALL
STORE
Standby mode
Read mode
Write mode
Recall mode
H
L
L
X
H
X
H
X
H
L
H
X
H
X
H
H
H
L
L
H
H
H
H
H
H
H
L
L
Output is high impedance
Output data
Input data
Output is high impedance
Store mode
Output is high impedance
Table 10
Recall operation starts at the rise of RECALL. It can be repeated without limitation.
Figure 8
Valid address
Valid data
Invalid data
Data I/O
Address
t
ORC
t
RCZ
Hi-Z
t
RCC
t
RCP
RECALL
t
ARC
CS
Table 11
X : Don
’
t care
Notes
When RECALL and STORE are simultaneously input, RECALL is valid.
When RECALL is low, STORE cannot be received.
When power supply voltage (V
CC
) is below store inhibition voltage V
WI
, the store operation is inhibited.
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