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參數(shù)資料
| 型號： | S-22S12 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 1Kbits Non-Volatile CMOS RAM(1K位 CMOS非易失性RAM) |
| 中文描述： | 1Kbits非揮發(fā)性CMOS存儲器（每1000位的CMOS非易失性內(nèi)存） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 77K |
| 代理商： | S-22S12 |
PARALLEL NON-VOLATILE RAM
S-22 Series
4
Seiko Instruments Inc.
AC Electrical Chracteristics
1. Read cycle
2. Write Cycle
Table 8
Parameter
Symbol
Min.
Typ.
Max
70
Unit
Write cycle time
CS pulse width
Address setup time
WE pulse width
Write reset time
Input data setup time
Input data hold time
Output disable time (WE)
Output enable time (WE)
t
WC
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
WLZ
200
120
20
120
25
50
20
10
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
Conditions
Input pulse voltage
S-22H Series : All inputs
S-22S Series : CS, WE, I/O and
address
S-22S Series : STORE and RECALL
0.0 to 3.0 V
0.0 to 4.0 V
10 ns
1.5 V
1TTL+100pF
Input pulse rise/fall time
I/O reference voltage
Output load
Parameter
Symbol
Min.
Typ.
Max
200
200
70
Unit
Read cycle time
Address access time
CS access time
Output data hold time
Output enable time (CS)
Output disable time (CS)
t
RC
t
AA
t
CS
t
OH
t
CLZ
t
CHZ
200
20
10
10
ns
ns
ns
ns
ns
ns
Table 6 Measuring conditions
Table 7
Figure 4
t
RC
Valid data
Hi
-
Z
t
CHZ
t
OH
t
CLZ
Address
Data I/O
t
AA
CS
t
CS
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