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參數(shù)資料
| 型號： | S-22S12 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 1Kbits Non-Volatile CMOS RAM(1K位 CMOS非易失性RAM) |
| 中文描述： | 1Kbits非揮發(fā)性CMOS存儲器（每1000位的CMOS非易失性內(nèi)存） |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 77K |
| 代理商： | S-22S12 |
PARALLEL NON-VOLATILE RAM
S-22 Series
2
Seiko Instruments Inc.
Block Diagram
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Symbol
Ratings
Unit
Power supply voltage
Input voltage
Output voltage
Storage temperature under bias
Storage temperature
V
CC
V
IN
V
OUT
T
bias
T
stg
-0.3 to +6.0
-0.3 to V
CC
+0.3
0.0 to V
CC
-50 to+95
-65 to+150
V
V
V
°
C
°
C
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Power supply voltage
High level input voltage 1
V
CC
V
IH
4.5
2.0
5.0
5.5
V
CC
V
V
S-22H Series : All inputs
S-22S Series : CS, WE, I/O and
address
S-22S Series : STORE and RECALL
S-22H Series : All inputs
S-22S Series : CS, WE, I/O and
address
S-22S Series : STORE and RECALL
High level input voltage 2
Low level input voltage 1
V
IHS
V
IL
3.4
0.0
V
CC
0.8
V
V
Low level input voltage 2
Operating temperature
V
ILS
T
opr
0.0
-40
0.8
+85
V
°
C
Figure 2
A7
(A5)*
Recall
Store
Non-volatile E
2
PROM
Memory Array
Column
I/O Circuit
A2(A2)*
A1(A1)*
A0(A0)*
A5
(A3)
RECALL
STORE
WE
CS
I/O4
I/O3
I/O1
I/O2
Pre-
amp.
Main
amp.
I/O Data
Control
Static RAM
Memory
Array
A4
A3
V
CC
GND
Row
Selection
Store
Control
Logic
Recall
Control
Logic
Column
Selection
A6
(A4)
*( ) is for the S-22H10 and S-22S10.
Table 1
Table 2
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