參數(shù)資料
型號(hào): S-22S12
廠商: Seiko Instruments Inc.
英文描述: 1Kbits Non-Volatile CMOS RAM(1K位 CMOS非易失性RAM)
中文描述: 1Kbits非揮發(fā)性CMOS存儲(chǔ)器(每1000位的CMOS非易失性內(nèi)存)
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 77K
代理商: S-22S12
Seiko Instruments Inc.
1
PARALLEL NON-VOLATILE RAM
S-22 Series
The S-22 Series is a non-volatile CMOS RAM, composed of a CMOS
static RAM and a non-volatile electrically erasable and programmable
memory (E
2
PROM) to backup the SRAM. The organization is 256-
word
×
4-bit (total 1K bits) for the S-22H12 and the S-22S12, and 64-
word
×
4-bit (total 256 bits) for the S-22H10 and the S-22S10.
Pin Assignment
A0 to A7(A5)*
I/O1 to I/O4
WE
CS
RECALL
STORE
GND
V
CC
Address input
Data input/output
Write enable
Chip select
Recall
Store
Ground
Power supply voltage (+5 V)
Features
1K bits
S-22H12
S-22S12
: TTL input, compatible with the X2212 of Xicor
: Schmitt input for STORE and RECALL pins
256 bits
S-22H10
S-22S10
: TTL input, compatible with the X2210 of Xicor
: Schmitt input for STORE and RECALL pins
Erroneous store protection :
3.5 V
+5-V single power supply (+5 V
±
10%)
Low current consumption
Operating : 10 mA typ.
Standby
Access time: 200 ns max.
: 1
μ
A max.
E
2
PROM store cycles : 10
5
times
E
2
PROM data retention: 10 years
18-pin DIP/SOP package
Figure 1
STORE
18-pin DIP/SOP
Top view
RECALL
2
3
4
5
6
7
8
9
10
13
12
14
11
15
16
18
17
A7(NC)*
A4
A3
A2
A1
I/O4
A5
A0
I/O3
I/O2
I/O1
WE
CS
1
GND
V
CC
A6(NC)*
*( ) is for the S-22H10 and S-22S10.
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