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參數(shù)資料
| 型號(hào)： | S-22S12 |
| 廠(chǎng)商： | Seiko Instruments Inc. |
| 英文描述： | 1Kbits Non-Volatile CMOS RAM(1K位 CMOS非易失性RAM) |
| 中文描述： | 1Kbits非揮發(fā)性CMOS存儲(chǔ)器（每1000位的CMOS非易失性?xún)?nèi)存） |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 77K |
| 代理商： | S-22S12 |
PARALLEL NON-VOLATILE RAM
S-22 Series
Seiko Instruments Inc.
3
Pin Capacitance
Table 3
(Ta=25
°
C, f=1.0 MHz, V
CC
=5 V)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance (I/O pins)
C
IN
C
I/O
V
IN
=0 V
V
I/O
=0 V
6
pF
pF
10
DC Electrical Characteristics
Data Hold Characteristics
Parameter
Symbol
Conditions
Min.
V
CC
-0.7
2.4
0.4
Typ.
Max
Unit
Operating current consumption
Standby current
Input leakage current
Output leakage current
Low level output voltage
I
CC
I
SB
I
LI
I
LO
V
OL
10
0.1
0.1
3.5
30
1
1
1
0.1
0.4
4.1
mA
μ
A
μ
A
μ
A
V
V
V
V
V
V
All inputs are V
CC
V
IN
=GND to V
CC
V
OUT
=GND to V
CC
CMOS : I
OL
=100
μ
A
TTL
CMOS : I
OH
=-100
μ
A
TTL
: I
OL
=4.2 mA
High level output voltage
V
OH
: I
OH
=-2 mA
Store inhibition voltage
Schmitt width
V
WI
V
WD
S-22S Series : STORE and RECALL
Parameter
Symbol
Conditions
Min.
Typ.
Max
Unit
Data hold voltage
Data hold setup time
Recovery time
V
DH
t
CDH
t
R
CS
≥
V
CC
-0.2V, RECALL
≥
V
CC
-0.2V
1.5
50
300
5.5
V
ns
ns
Table 4
(Ta=-40
°
C to 85
°
C, V
CC
=+5 V
±
10%)
Table 5
Figure 3 Data hold timing chart
Data hold mode
t
R
V
DH
t
CDH
GND
V
IL
CS
V
IL
4.5 V
V
CC
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