參數(shù)資料
型號(hào): RN1110F
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路及驅(qū)動(dòng)電路應(yīng)用
文件頁數(shù): 1/5頁
文件大小: 159K
代理商: RN1110F
RN1110F,RN1111F
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1110F,RN1111F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2110F, RN2111F
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
c
50
V
Collector-emitter voltage
50
V
Emitter-base voltage
5
V
Collector current
100
mA
Collector power dissipation
P
c
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
I
EBO
h
FE
V
CB
= 50V, I
E
= 0
100
nA
Emitter cut-off current
V
EB
= 5V, I
C
= 0
100
nA
DC current gain
V
CE
= 5V, I
C
= 1mA
120
700
Collector-emitter saturation voltage
V
CE (sat)
f
T
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
Translation frequency
V
CE
= 10V, I
C
= 5mA
250
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f
= 1MHz
3
6
pF
RN1110F
3.29
4.7
6.11
Input resistor
RN1111F
R1
7
10
13
k
JEDEC
EIAJ
TOSHIBA
2-2HA1A
Unit: mm
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