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參數(shù)資料
| 型號： | RN1113FT |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進程）（偏置電阻內(nèi)置晶體管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 113K |
| 代理商： | RN1113FT |
RN1112FT,RN1113FT
2002-01-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112FT,RN1113FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
High-density mount is possible because of devices housed in very thin
TESM packages.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Wide range of resistor values are available to use in various circuit
designs.
Complementary to RN2112FT, RN2113FT
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector poser dissipation
P
C
(Note)
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Total rating
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
R1
B
C
E
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| RN1113MFV | 功能描述:開關(guān)晶體管 - 偏壓電阻器 INCORRECT MOUSER P/N 47Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| RN1113MFV(TPL3) | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50volts 3Pin 47Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| RN1114 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN1114_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN1114MFV | 功能描述:開關(guān)晶體管 - 偏壓電阻器 INCORRECT MOUSER P/N 1.0Kohms x 10Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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