<small id="wjefv"><sup id="wjefv"><ins id="wjefv"></ins></sup></small>
<nobr id="wjefv"></nobr>
<small id="wjefv"><noframes id="wjefv"><kbd id="wjefv"></kbd>
  • <big id="wjefv"><xmp id="wjefv">
    <pre id="wjefv"></pre>
    參數(shù)資料
    型號(hào): RN1115
    廠商: Toshiba Corporation
    英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
    中文描述: 開(kāi)關(guān),逆變電路,接口電路及驅(qū)動(dòng)電路應(yīng)用
    文件頁(yè)數(shù): 1/8頁(yè)
    文件大?。?/td> 261K
    代理商: RN1115
    RN1114~RN1118
    2001-06-07
    1
    TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
    RN1114,RN1115,RN1116,RN1117,RN1118
    Switching, Inverter Circuit, Interface Circuit
    And Driver Circuit Applications
    With built-in bias resistors.
    Simplify circuit design
    Reduce a quantity of parts and manufacturing process
    Complementary to RN2114~2118
    Equivalent Circuit and Bias Resistor Values
    Maximum Ratings
    (Ta = 25 C)
    Characteristic
    Symbol
    Rating
    Unit
    Collector-base voltage
    V
    CBO
    50
    V
    Collector-emitter voltage
    RN1114~1118
    V
    CEO
    50
    V
    RN1114
    5
    RN1115
    6
    RN1116
    7
    RN1117
    15
    Emitter-base voltage
    RN1118
    V
    EBO
    25
    V
    Collector current
    I
    c
    100
    mA
    Collector power dissipation
    P
    c
    100
    mW
    Junction temperature
    T
    j
    150
    C
    Storage temperature range
    RN1114~1118
    T
    stg
    55~150
    C
    JEDEC
    EIAJ
    TOSHIBA
    Weight: 2.4mg
    2-2H1A
    Type No.
    R
    1
    (k
    )
    R
    2
    (k
    )
    RN1114
    1
    10
    RN1115
    2.2
    10
    RN1116
    4.7
    10
    RN1117
    10
    4.7
    RN1118
    47
    10
    Unit: mm
    相關(guān)PDF資料
    PDF描述
    RN1116 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
    RN1117 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
    RN1118 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
    RN1201 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
    RN1202 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    RN1115MFV(TPL3) 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 2.2Kohms x 10Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
    RN1116 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
    RN1116(TE85L,F) 制造商:Toshiba 功能描述:NPN 50V 100mA
    RN1116MFV(TPL3) 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 50volts 100mA 3Pin 4.7Kohms x 10Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
    RN1117 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications