參數(shù)資料
型號: RN1201
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 1/6頁
文件大小: 251K
代理商: RN1201
RN1201~RN1206
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1201,RN1202,RN1203,RN1204,RN1205,RN1206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2201~2206
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1201~1206
V
CEO
50
V
RN1201~1204
10
Emitter-base voltage
RN1205, 1206
V
EBO
5
V
Collector current
I
c
100
mA
Collector power dissipation
P
c
300
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1201~1206
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
2-4E1A
Type No.
R1 (k
)
R2 (k
)
RN1201
4.7
4.7
RN1202
10
10
RN1203
22
22
RN1204
47
47
RN1205
2.2
47
RN1206
4.7
47
Unit: mm
相關(guān)PDF資料
PDF描述
RN1202 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1203 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1204 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1205 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN1201(F) 制造商:Toshiba 功能描述:NPN 50V 100mA 4.7 / 4.7 MINI 制造商:Toshiba 功能描述:NPN 50V 100mA 4.7 / 4.7 MINI Bulk
RN1202 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1202(F) 制造商:Toshiba 功能描述:NPN 50V 100mA 10 / 10 MINI Bulk
RN1203 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1203(F) 制造商:Toshiba 功能描述:NPN 50V 100mA 22 / 22 MINI 制造商:Toshiba 功能描述:NPN 50V 100mA 22 / 22 MINI Bulk