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參數資料
| 型號： | RN1203 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進程） |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 251K |
| 代理商： | RN1203 |
RN1201~RN1206
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1201,RN1202,RN1203,RN1204,RN1205,RN1206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2201~2206
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1201~1206
V
CEO
50
V
RN1201~1204
10
Emitter-base voltage
RN1205, 1206
V
EBO
5
V
Collector current
I
c
100
mA
Collector power dissipation
P
c
300
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1201~1206
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Type No.
R1 (k
)
R2 (k
)
RN1201
4.7
4.7
RN1202
10
10
RN1203
22
22
RN1204
47
47
RN1205
2.2
47
RN1206
4.7
47
Unit: mm
相關PDF資料 |
PDF描述 |
|---|---|
| RN1204 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1205 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1206 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1207 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1208 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RN1203(F) | 制造商:Toshiba 功能描述:NPN 50V 100mA 22 / 22 MINI 制造商:Toshiba 功能描述:NPN 50V 100mA 22 / 22 MINI Bulk |
| RN1204 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| RN1204(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin Mini Bulk |
| RN1205 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1205(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin Mini |
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