參數(shù)資料
型號: RN1112FT
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
中文描述: 東芝npn型晶體管硅外延型(厘進程)(偏置電阻內置晶體管)
文件頁數(shù): 1/3頁
文件大?。?/td> 113K
代理商: RN1112FT
RN1112FT,RN1113FT
2002-01-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112FT,RN1113FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
High-density mount is possible because of devices housed in very thin
TESM packages.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Wide range of resistor values are available to use in various circuit
designs.
Complementary to RN2112FT, RN2113FT
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector poser dissipation
P
C
(Note)
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
R1
B
C
E
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