參數(shù)資料
型號： RLP03N06CLE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 3/13頁
文件大?。?/td> 188K
代理商： RLP03N06CLE
3
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. TYPICAL NORMALIZED DRAIN CURRENT vs
JUNCTION TEMPERATURE
FIGURE 4. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1
10
100
I
D
,
0.1
1
175
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= +25
o
C
OPERATION IN THIS
AREA IS LIMITED BY
JUNCTION TEMPERATURE
25
o
C
DC
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
0.01
0.05
0.1
0.2
0.5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-2
10
-1
P
DM
t
1
t
2
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
0
10
1
D
,
2.0
1.0
0.5
0
-80
1.5
T
J
, JUNCTION TEMPERATURE (
o
C)
-40
0
40
80
120
160
200
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
D
,
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
0
0.10
0.20
0.30
0
1.0
2.0
3.0
4.0
5.0
V
GS
= 3V
V
GS
= 4V
V
GS
= 7.5V
V
GS
= 5V
0.40
+25
o
C
+175
o
C
V
DD
= 15V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
0.0
2.0
3.0
4.0
5.0
1.0
0
0.30
0.40
I
D
,
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
0.50
0.60
0.20
0.10
相關(guān)PDF資料
PDF描述
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLP1N06CLE 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應(yīng)管)
RLP1N08LE 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET
RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
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