參數(shù)資料
型號(hào)： RLP03N06CLE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 11/13頁
文件大?。?/td> 188K
代理商： RLP03N06CLE
11
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
TO-251AA
3 LEAD JEDEC TO-251AA PLASTIC PACKAGE
LEAD NO. 1
-
GATE
LEAD NO. 2
-
DRAIN
LEAD NO. 3
-
SOURCE
TERM. 4
-
DRAIN
b
2
E
A
c
SEATING
PLANE
L
1
D
L
b
e
1
2
3
b
1
H
1
J
1
A
1
e
1
TERM. 4
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.086
0.094
2.19
2.38
-
A
1
b
0.018
0.022
0.46
0.55
3, 4
0.028
0.032
0.72
0.81
3, 4
b
1
b
2
c
0.033
0.040
0.84
1.01
3
0.205
0.215
5.21
5.46
3, 4
0.018
0.022
0.46
0.55
3, 4
D
0.270
0.290
6.86
7.36
-
E
0.250
0.265
6.35
6.73
-
e
0.090 TYP
2.28 TYP
5
e
1
H
1
J
1
L
0.180 BSC
4.57 BSC
5
0.035
0.045
0.89
1.14
-
0.040
0.045
1.02
1.14
6
0.355
0.375
9.02
9.52
-
L
1
0.075
0.090
1.91
2.28
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-251AA outline dated 9-88.
2. Solder finish uncontrolled in this area.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 10-95.
相關(guān)PDF資料
PDF描述
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLP1N06CLE 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場(chǎng)效應(yīng)管)
RLP1N08LE 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET
RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
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