參數(shù)資料
型號(hào): RLP03N06CLE
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述: 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 10/13頁(yè)
文件大?。?/td> 188K
代理商: RLP03N06CLE
10
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
LEAD NO. 1
-
GATE
LEAD NO. 2
-
DRAIN
LEAD NO. 3
-
SOURCE
TERM. 4
-
DRAIN
E
P
Q
D
H
1
E
1
L
L
1
60
o
b
1
b
1
2
e
3
e
1
A
c
J
1
45
o
D
1
A
1
TERM. 4
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A
1
b
0.048
0.052
1.22
1.32
-
0.030
0.034
0.77
0.86
3, 4
b
1
c
0.045
0.055
1.15
1.39
2, 3
0.014
0.019
0.36
0.48
2, 3, 4
D
0.590
0.610
14.99
15.49
-
D
1
E
-
0.160
-
4.06
-
0.395
0.410
10.04
10.41
-
E
1
e
-
0.030
-
0.76
-
0.100 TYP
2.54 TYP
5
e
1
H
1
J
1
L
0.200 BSC
5.08 BSC
5
0.235
0.255
5.97
6.47
-
0.100
0.110
2.54
2.79
6
0.530
0.550
13.47
13.97
-
L
1
P
0.130
0.150
3.31
3.81
2
0.149
0.153
3.79
3.88
-
Q
0.102
0.112
2.60
2.84
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L
1
.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 1 dated 1-93.
相關(guān)PDF資料
PDF描述
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLP1N06CLE 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場(chǎng)效應(yīng)管)
RLP1N08LE 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET
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