參數(shù)資料
型號: RBO40-40T
廠商: 意法半導(dǎo)體
英文描述: REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
中文描述: REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
文件頁數(shù): 7/15頁
文件大?。?/td> 166K
代理商: RBO40-40T
1
2
5
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10.0
Transil T1
Transil T2
t
p
(ms)
Ppp(kW)
Fig. 1 :
Peak pulse power versus exponential
pulseduration(Tjinitial = 85
°
C).
V
(V)
CL
1
2
5
10
20
50
100
200
500
25
30
35
40
45
50
55
tp = 1ms
tp = 20
μ
s
I
pp
(A)
Fig. 2-2 :
Clamping voltage versus peak pulse
current (Tj initial = 85
°
C).
Exponential waveform tp = 1 ms and tp = 20
μ
s
(TRANSILT1).
0.1
0.2
0.5
1
2
5
10
20
50
100
30.0
32.5
35.0
37.5
40.0
42.5
45.0
tp = 40ms
tp = 1ms
I
pp
(A)
V
(V)
CL
Fig. 2-1 :
Clamping voltage versus peak pulse
current (Tj initial = 85
°
C).
Exponential waveform tp = 40 ms and tp = 1 ms
(TRANSILT2).
0
25
50
75
100
125
150
175
0.00
0.20
0.40
0.60
0.80
1.00
1.20
Tj initial (
°
C)
Ppp[Tj]/Ppp[Tj initial=85
°
C]
Fig. 3 :
Relative variation of peak pulse power
versus junction temperature.
RBO40-40G / RBO40-40M / RBO40-40T
7/15
相關(guān)PDF資料
PDF描述
RBO40-40G REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
RBO40-40M REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
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