參數資料
型號: RBO40-40M
廠商: 意法半導體
英文描述: REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
中文描述: REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
文件頁數: 1/15頁
文件大小: 166K
代理商: RBO40-40M
RBO40-40G/M/T
REVERSEDBATTERYAND
PowerSO-10
TM
RBO40-40M
PROTECTIONAGAINST”LOADDUMP” PULSE
40A DIODE TO GUARD AGAINST BATTERY
REVERSAL
MONOLITHIC STRUCTURE FOR GREATER
RELIABILITY
BREAKDOWN VOLTAGE: 24V min.
CLAMPINGVOLTAGE:
±
40 V max.
COMPLIANTWITHISO / DTR 7637
FEATURES
Designedto protectagainstbatteryreversaland
loaddump overvoltagesin automotiveapplica-
tions,thismonolithiccomponentoffersmultiple
functionsin thesamepackage:
D1 : reversedbatteryprotection
T1 : clampingagainstnegativeovervoltages
T2 : Transilfunctionagainst”load dump”effect.
DESCRIPTION
FUNCTIONAL DIAGRAM
1
2
3
OVERVOLTAGEPROTECTIONCIRCUIT(RBO)
Application Specific Discretes
A.S.D.
TM
January 1997 - Ed : 3
D
2
PAK
RBO40-40G
TO220AB
RBO40-40T
1/15
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