參數(shù)資料
型號: RBO40-40T
廠商: 意法半導(dǎo)體
英文描述: REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
中文描述: REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
文件頁數(shù): 3/15頁
文件大?。?/td> 166K
代理商: RBO40-40T
Symbol
Test Conditions
Value
Typ.
Unit
Min.
Max.
1.9
1.45
1
0.95
V
F 13
V
F 13
V
F 13
V
F 13
C
13
I
F
= 40A
I
F
= 20A
I
F
= 1A
I
F
= 100mA
F = 1MHz V
R
= 0 V
V
V
V
V
pF
3000
ELECTRICAL CHARACTERISTICS: DIODED1
(- 40
°
C< T
amb
< + 85
°
C)
Symbol
V
RM31
/V
RM32
V
BR31
/V
BR32
I
R31
/I
R32
V
CL31
/V
CL32
V
F13
I
PP
α
T
C
31
/C
32
C
13
Parameter
Stand-offvoltageTransil T1 / TransilT2.
BreakdownvoltageTransilT1 / TransilT2.
LeakagecurrentTransilT1 / TransilT2.
ClampingvoltageTransilT1 / TransilT2.
Forwardvoltagedrop DiodeD1.
Peak pulsecurrent.
Temperaturecoefficientof V
BR
.
CapacitanceTransil T1 / TransilT2.
Capacitanceof DiodeD1
Symbol
TestConditions
Value
Typ.
Unit
Min.
22
24
Max.
35
32
100
10
40
9
V
BR 31
V
BR 31
I
RM 31
I
RM 31
V
CL 31
α
T
C
31
I
R
= 1 mA
I
R
= 1 mA,T
amb
= 25
°
C
V
RM
= 20 V
V
RM
= 20 V, T
amb
= 25
°
C
I
PP
=37.5A,Tjinitial= 25
°
C
Temperaturecoefficient of V
BR
F = 1MHz
V
R
= 0 V
V
V
μ
A
μ
A
V
10/1000
μ
s
10
-4
/
°
C
pF
3000
ELECTRICAL CHARACTERISTICS: TRANSIL T1
(- 40
°
C< T
amb
< + 85
°
C)
Symbol
TestConditions
Value
Min.
22
24
Unit
Typ.
Max.
35
32
100
10
40
9
V
BR 32
V
BR 32
I
RM 32
I
RM 32
V
CL 32
α
T
C
32
I
R
=1 mA
I
R
=1 mA, T
amb
= 25
°
C
V
RM
= 20 V
V
RM
=20 V,T
amb
= 25
°
C
I
PP
= 20 A (note1)
Temperaturecoefficient of V
BR
F = 1MHz
V
R
= 0 V
V
V
μ
A
μ
A
V
10
-4
/
°
C
pF
8000
Note 1 :
One pulse, see pulse definition in load dump testgenerator circuit.
ELECTRICAL CHARACTERISTICS: TRANSIL T2
(- 40
°
C < T
amb
< + 85
°
C)
RBO40-40G / RBO40-40M / RBO40-40T
3/15
相關(guān)PDF資料
PDF描述
RBO40-40G REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
RBO40-40M REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
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RC-RSA-H-200-M ROD ACTUATOR. H200 AND CABLE
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