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參數(shù)資料
| 型號： | R5F213J5TNNP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | MICROCONTROLLER, QCC40 |
| 封裝： | 5 X 5 MM, 0.40 MM PITCH, QFN-40 |
| 文件頁數(shù)： | 6/45頁 |
| 文件大?。?/td> | 440K |
| 代理商： | R5F213J5TNNP |
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14
ATtiny4/5/9/10 [DATASHEET]
8127F–AVR–02/2013
5.
Memories
This section describes the different memories in the ATtiny4/5/9/10. Devices have two main memory areas, the
program memory space and the data memory space.
5.1
In-System Re-programmable Flash Program Memory
The ATtiny4/5/9/10 contain 512/1024 bytes of on-chip, in-system reprogrammable Flash memory for program stor-
age. Since all AVR instructions are 16 or 32 bits wide, the Flash is organized as 256/512 x 16.
The Flash memory has an endurance of at least 10,000 write/erase cycles. The ATtiny4/5/9/10 Program Counter
(PC) is 9 bits wide, thus capable of addressing the 256/512 program memory locations, starting at 0x000. “Memory
Programming” on page 106 contains a detailed description on Flash data serial downloading.
Constant tables can be allocated within the entire address space of program memory. Since program memory can
not be accessed directly, it has been mapped to the data memory. The mapped program memory begins at byte
address 0x4000 in data memory (see Figure 5-1 on page 15). Although programs are executed starting from
address 0x000 in program memory it must be addressed starting from 0x4000 when accessed via the data
memory.
Internal write operations to Flash program memory have been disabled and program memory therefore appears to
firmware as read-only. Flash memory can still be written to externally but internal write operations to the program
memory area will not be succesful.
Timing diagrams of instruction fetch and execution are presented in “Instruction Execution Timing” on page 9.
5.2
Data Memory
Data memory locations include the I/O memory, the internal SRAM memory, the non-volatile memory lock bits, and
the Flash memory. See Figure 5-1 on page 15 for an illustration on how the ATtiny4/5/9/10 memory space is
organized.
The first 64 locations are reserved for I/O memory, while the following 32 data memory locations address the inter-
nal data SRAM.
The non-volatile memory lock bits and all the Flash memory sections are mapped to the data memory space.
These locations appear as read-only for device firmware.
The four different addressing modes for data memory are direct, indirect, indirect with pre-decrement, and indirect
with post-increment. In the register file, registers R26 to R31 function as pointer registers for indirect addressing.
The IN and OUT instructions can access all 64 locations of I/O memory. Direct addressing using the LDS and STS
instructions reaches the 128 locations between 0x0040 and 0x00BF.
The indirect addressing reaches the entire data memory space. When using indirect addressing modes with auto-
matic pre-decrement and post-increment, the address registers X, Y, and Z are decremented or incremented.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| R5F213J5TNNP#W4 | 功能描述:MCU 24KB ROM 2KB RAM 40-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/3JT 標準包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲器容量:- 程序存儲器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR) |
| R5F213J6ANNP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F213J6CNNP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F213J6CNNP#U0 | 功能描述:MCU 1KB FLASH 32K ROM 36-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/3JC 標準包裝:250 系列:LPC11Uxx 核心處理器:ARM? Cortex?-M0 芯體尺寸:32-位 速度:50MHz 連通性:I²C，Microwire，SPI，SSI，SSP，UART/USART，USB 外圍設備:欠壓檢測/復位，POR，WDT 輸入/輸出數(shù):40 程序存儲器容量:96KB（96K x 8） 程序存儲器類型:閃存 EEPROM 大小:4K x 8 RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):1.8 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:48-LQFP 包裝:托盤 其它名稱:568-9587 |
| R5F213J6CNNP#W4 | 功能描述:MCU 32KB ROM 2.5KB RAM 36-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/3JC 標準包裝:300 系列:78K0R/Ix3 核心處理器:78K/0R 芯體尺寸:16-位 速度:40MHz 連通性:3 線 SIO，I²C，LIN，UART/USART 外圍設備:DMA，LVD，POR，PWM，WDT 輸入/輸出數(shù):27 程序存儲器容量:16KB（16K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:38-SSOP 包裝:托盤 |
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