參數(shù)資料
型號(hào): R5F213J5TNNP
元件分類: 微控制器/微處理器
英文描述: MICROCONTROLLER, QCC40
封裝: 5 X 5 MM, 0.40 MM PITCH, QFN-40
文件頁(yè)數(shù): 24/45頁(yè)
文件大?。?/td> 440K
代理商: R5F213J5TNNP
MSM6222B-01
Semiconductor
30/45
FEDL6222B-01-01
Generate biases externally and input them to the MSM6222B-01 (VDD, V1, V2, V3, V4,
and V5).
When the number of biases is 4, input the same potential to V2 and V3. The execution
time, when the OSC oscillation frequency is 250 kHz, is 40 ms.
(7) CG RAM address setting
L
R/W
Instruction code
L
RS
L
DB7
H
DB6
C5
DB5
C4
DB4
C3
DB3
C2
DB2
C1
DB1
C0
DB0
L
R/W
Instruction code
H
RS
E7
DB7
E6
DB6
E5
DB5
E4
DB4
E3
DB3
E2
DB2
E1
DB1
E0
DB0
L
R/W
Instruction code
L
RS
H
DB7
D6
DB6
D5
DB5
D4
DB4
D3
DB3
D2
DB2
D1
DB1
D0
DB0
When CG RAM addresses, bits C5 to C0 (binary), are set, the CG RAM is specified, until
the DD RAM address is set.
Write/read of the character pattern to and from the CPU begins with addresses, bits C5
to C0, starting from CG RAM selection.
The execution time, when the OSC oscillation frequency is 250 kHz, is 40 ms.
(8) DD RAM address setting
When the DD RAM addresses D6 to D0 (binary) are selected, the DD RAM is specified
until the DD RAM address is set.
Write/read of the character code to and from the CPU begins with addresses D6 to D0
starting from DD RAM selection.
In the 1-line display mode (N = H), however, D6 to D0 (binary) must be set to one of the
values among "00" to "4F" (hex.).
Likewise, in the 2-line mode, D6 to D0 (binary) must be set to one of the values among
"00" to "27" (hex.) or "40" to "67" (hex.).
When any value other than the above is input, it is impossible to make a normal write/
read of character codes to and from the DD RAM.
The execution time, when the OSC oscillation frequency is 250 kHz, is 40 ms.
(9) DD RAM and CG RAM data write
When E7 to E0 (binary) codes are written to the DD RAM or CG RAM, the cursor and
display move as described in "(5) Cursor and display shift". The execution time, when
the OSC oscillation frequency is 250 kHz, is 40 ms.
相關(guān)PDF資料
PDF描述
R5F2L35ACDFP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP52
R5F2L368ANFA 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP64
R5F2L3ACADFA 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100
R5F2L388ANFP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
R5F2L388ADFA 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R5F213J5TNNP#W4 功能描述:MCU 24KB ROM 2KB RAM 40-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:R8C/3x/3JT 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI,I²C,UART/USART 外圍設(shè)備:POR,PWM,WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:- 程序存儲(chǔ)器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC(J 形引線) 包裝:帶卷 (TR)
R5F213J6ANNP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F213J6CNNP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU
R5F213J6CNNP#U0 功能描述:MCU 1KB FLASH 32K ROM 36-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:R8C/3x/3JC 標(biāo)準(zhǔn)包裝:250 系列:LPC11Uxx 核心處理器:ARM? Cortex?-M0 芯體尺寸:32-位 速度:50MHz 連通性:I²C,Microwire,SPI,SSI,SSP,UART/USART,USB 外圍設(shè)備:欠壓檢測(cè)/復(fù)位,POR,WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:96KB(96K x 8) 程序存儲(chǔ)器類型:閃存 EEPROM 大小:4K x 8 RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):1.8 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:48-LQFP 包裝:托盤(pán) 其它名稱:568-9587
R5F213J6CNNP#W4 功能描述:MCU 32KB ROM 2.5KB RAM 36-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:R8C/3x/3JC 標(biāo)準(zhǔn)包裝:300 系列:78K0R/Ix3 核心處理器:78K/0R 芯體尺寸:16-位 速度:40MHz 連通性:3 線 SIO,I²C,LIN,UART/USART 外圍設(shè)備:DMA,LVD,POR,PWM,WDT 輸入/輸出數(shù):27 程序存儲(chǔ)器容量:16KB(16K x 8) 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:38-SSOP 包裝:托盤(pán)