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參數(shù)資料
| 型號： | Q67060-S6504-A5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HITFET II.Generation BTS 134 D |
| 中文描述： | HITFET II.Generation基站134? |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 359K |
| 代理商： | Q67060-S6504-A5 |
2004-03-05
Page 4
BTS 134 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= 25°C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 4.7 ,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 4.7 ,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Slew rate on 70 to 50%
V
bb
:
R
L
= 4.7 ,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Slew rate off 50 to 70%
V
bb
:
R
L
= 4.7 ,
V
IN
= 10 to 0 V,
V
bb
= 12 V
t
on
-
60
100
μs
t
off
-
60
100
-dV
DS
/dt
on
-
0.3
1.5
V/μs
dV
DS
/dt
off
-
0.7
1.5
Protection Functions
1)
Thermal overload trip temperature
Thermal hysteresis
2)
T
jt
150
175
-
°C
T
jt
-
10
-
K
Input current protection mode
T
j
= 150 °C
Unclamped single pulse inductive energy
2)
I
D
= 3 A,
T
j
= 25 °C,
V
bb
= 12 V
I
IN(Prot)
-
130
300
μA
E
AS
3
-
-
J
Inverse Diode
Inverse diode forward voltage
I
F
= 15 A,
t
m
= 250 μs,
V
IN
= 0 V,
t
P
= 300 μs
V
SD
-
1.0
1.5
V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
.
2not subject to production test, specified by design
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