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參數(shù)資料
| 型號： | Q67060-S6504-A5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HITFET II.Generation BTS 134 D |
| 中文描述： | HITFET II.Generation基站134? |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 359K |
| 代理商： | Q67060-S6504-A5 |
2004-03-05
Page 2
BTS 134 D
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Value
42
Unit
V
Drain source voltage
V
DS
V
bb(SC)
V
IN
I
IN
Supply voltage for full short circuit protection
Continuous input voltage
1)
Continuous input current
2)
-0.2V
V
IN
10V
V
IN
< -0.2V or
V
IN
> 10V
42
-0.2
2)
... +10
self limited
|
I
IN
| 2
mA
Operating temperature
T
j
T
stg
P
tot
-40 ...+150
-55 ... +150
°C
Storage temperature
Power dissipation
5)
T
C
= 85 °C
6cm
2
cooling area ,
T
A
= 85 °C
Unclamped single pulse inductive energy
2)
Load dump protection
V
LoadDump2)3)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2 ,
R
L
= 4.5 ,
V
A
= 13.5 V
E
lectro
s
tatic
d
ischarge voltage
2)
(Human Body Model)
according to
Jedec norm
EIA/JESD22-A114-B, Section 4
Jedec h
umidity category,
J-STD-20-B
IEC climatic category; DIN
EN 60068-1
43
1.1
W
E
AS
V
LD
3
J
65
V
V
ESD
2
kV
40/150/56
Thermal resistance
junction - case:
R
thJC
R
thJA
1.5
K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
4)
115
55
1For input voltages beyond these limits I
IN
has to be limited.
2not subject to production test, specified by design
3
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by RthJA and Rds(on)
MSL1
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