參數(shù)資料
型號: Q67060-S6504-A5
廠商: INFINEON TECHNOLOGIES AG
英文描述: HITFET II.Generation BTS 134 D
中文描述: HITFET II.Generation基站134?
文件頁數(shù): 1/10頁
文件大?。?/td> 359K
代理商: Q67060-S6504-A5
2004-0
3
-0
5
Page 1
HITFET II.Generation BTS 134 D
Smart Lowside Power Switch
Product Summary
Drain source voltage
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
V
On-state resistance
50
m
Nominal load current
3.5
A
Clamping energy
3
J
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown with
auto restart
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
P-TO252-3-11
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
μC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
V
bb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67060-S6700-A2 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6700-A3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6700-A4 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6703-A2 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6703-A4 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch