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| 型號(hào)： | Q67060-S6504-A5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HITFET II.Generation BTS 134 D |
| 中文描述： | HITFET II.Generation基站134? |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 359K |
| 代理商： | Q67060-S6504-A5 |
2004-03-05
Page 3
BTS 134 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= 25°C, unless otherwise specified
Characteristics
min.
typ.
max.
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
D
= 10 mA
Off-state drain current
T
j
= -40...+85 °C,
V
DS
= 32 V ,
V
IN
= 0 V
T
j
= 150 °C
Input threshold voltage
I
D
=
1.4
mA,
T
j
= 25 °C
I
D
=
1.4
mA,
T
j
= 150 °C
On state input current
V
DS(AZ)
42
-
55
V
I
DSS
-
-
1.5
5
8
15
μA
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
I
IN(on)
R
DS(on)
-
10
30
μA
On-state resistance
V
IN
= 5 V,
I
D
= 3 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 3 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 3 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 3 A,
T
j
= 150 °C
Nominal load current
5)
T
j
< 150°C,
V
IN
= 10 V,
T
A
= 85 °C, SMD
1)
Nominal load current
5)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 °C,
T
j
< 150°C
Current limit (active if
V
DS
>2.5 V)
2)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 200 μs
-
-
45
75
60
100
m
R
DS(on)
-
-
35
65
50
90
I
D(Nom)
3.5
4.6
-
A
I
D(ISO)
7.1
10
-
I
D(lim)
18
24
30
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
5not subject to production test, calculated by RthJA and Rds(on)
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