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參數(shù)資料
| 型號： | PZT2907AT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Silicon Epitaxial Transistor(PNP型外延晶體管) |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 133K |
| 代理商： | PZT2907AT1 |
PZT2907AT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
Base Breakdown Voltage
(I
C
=
10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
Collector
Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
Vdc
Emitter
Base Breakdown Voltage
(I
E
=
10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Collector
Base Cutoff Current
(V
CB
=
50 Vdc, I
E
= 0)
I
CBO
10
nAdc
Collector
Emitter Cutoff Current
(V
CE
=
30 Vdc, V
BE
= 0.5 Vdc)
I
CEX
50
nAdc
Base
Emitter Cutoff Current
(V
CE
=
30 Vdc, V
BE
=
0.5 Vdc)
I
BEX
50
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
=
0.1 mAdc, V
CE
=
10 Vdc)
(I
C
=
1.0 mAdc, V
CE
=
10 Vdc)
(I
C
=
10 mAdc, V
CE
=
10 Vdc)
(I
C
=
150 mAdc, V
CE
=
10 Vdc)
(I
C
=
500 mAdc, V
CE
=
10 Vdc)
h
FE
75
100
100
100
50
300
Collector-Emitter Saturation Voltages
(I
C
=
150 mAdc, I
B
=
15 mAdc)
(I
C
=
500 mAdc, I
B
=
50 mAdc)
V
CE(sat)
0.4
1.6
Vdc
Base-Emitter Saturation Voltages
(I
C
=
150 mAdc, I
B
=
15 mAdc)
(I
C
=
500 mAdc, I
B
=
50 mAdc)
DYNAMIC CHARACTERISTICS
V
BE(sat)
1.3
2.6
Vdc
Current-Gain
Bandwidth Product
(I
C
=
50 mAdc, V
CE
=
20 Vdc, f = 100 MHz)
f
T
200
MHz
Output Capacitance
(V
CB
=
10 Vdc, I
E
= 0, f = 1.0 MHz)
C
c
8.0
pF
Input Capacitance
(V
EB
=
2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
e
30
pF
SWITCHING TIMES
Turn-On Time
(V
CC
=
30 Vdc, I
C
=
150 mAdc,
I
B1
=
15 mAdc)
t
on
45
ns
Delay Time
t
d
10
Rise Time
t
r
40
Turn-Off Time
(V
CC
=
6.0 Vdc, I
C
=
150 mAdc,
I
B1
= I
B2
=
15 mAdc)
t
off
100
ns
Storage Time
t
s
80
Fall Time
t
f
30
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2907AT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Silicon Planar Epitaxial Transistor |
| PZT2907AT1_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Epitaxial Transistor |
| PZT2907AT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2907AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2907AT3 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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