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參數(shù)資料
| 型號(hào)： | PZT2907AT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Silicon Epitaxial Transistor(PNP型外延晶體管) |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 133K |
| 代理商： | PZT2907AT1 |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 8
1
Publication Order Number:
PZT2907AT1/D
PZT2907AT1
Preferred Device
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
Pb
Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CEO
60
Vdc
Collector
Base Voltage
V
CBO
60
Vdc
Emitter
Base Voltage
V
EBO
5.0
Vdc
Collector Current
Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
T
A
= 25
°
C
P
D
1.5
12
W
mW/
°
C
Thermal Resistance Junction
to
Ambient
(Note 1)
R
JA
83.3
°
C/W
Lead Temperature for Soldering,
0.0625
″
from case
Time in Solder Bath
T
L
260
10
°
C
Sec
Operating and Storage Temperature Range
T
J
, T
stg
65 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
4 with 1 oz and 713 mm
2
of copper area.
Preferred
devices are recommended choices for future use
and best overall value.
SOT
223
CASE 318E
STYLE 1
MARKING
DIAGRAM
COLLECTOR
2, 4
1
BASE
3
EMITTER
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
Package
Shipping
ORDERING INFORMATION
PZT2907AT1
SOT
223
1000 / Tape & Reel
PZT2907AT1G
SOT
223
(Pb
Free)
1000 / Tape & Reel
PZT2907AT3
SOT
223
4000 / Tape & Reel
1
AYW
P2F
P2F
A
Y
W
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
http://onsemi.com
(Note: Microdot may be in either location)
PZT2907AT3G
SOT
223
(Pb
Free)
4000 / Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZT2907A | PNP SILICON TRANSISTOR SURFACE MOUNT |
| PZT2907A | SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT |
| PZT2907AT1 | SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT |
| PZT2907A | PNP General Purpose Amplifier |
| PZT3904T1 | General Purpose Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2907AT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Silicon Planar Epitaxial Transistor |
| PZT2907AT1_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Epitaxial Transistor |
| PZT2907AT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2907AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2907AT3 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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