參數(shù)資料
型號: PTB20166
廠商: ERICSSON
英文描述: 23 Watts, 675-925 MHz Common Base RF Power Transistor
中文描述: 23瓦,675-925 MHz的通用基礎(chǔ)射頻功率晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 46K
代理商: PTB20166
e
1
Typical Output Power vs. Input Power
30
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Input Power (Watts)
O
V
CC
= 28 V
f = 925 MHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4
Vdc
Collector Current (continuous)
I
C
4
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
48
0.27
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
3.6
°C/W
PTB 20166
23 Watts, 675–925 MHz
Common Base RF Power Transistor
Description
The 20166 is an NPN, common base RF power transistor intended
for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23
watts minimum output power, it may be used for both CW and pulsed
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20209
20166
LOTCODE
Specified at 28 Volt, 925 MHz
Class C Characteristics
55% Min Collector Efficiency at 23 Watts
Gold Metallization
Silicon Nitride Passivated
9/28/98
相關(guān)PDF資料
PDF描述
PTB20167 60 Watts, 850-960 MHz RF Power Transistor
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PTB20175 55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor
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