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參數(shù)資料
| 型號： | PTB20175 |
| 廠商： | ERICSSON |
| 英文描述： | 55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor |
| 中文描述： | 55瓦，1.9-2.0千兆赫蜂窩無線射頻功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 579K |
| 代理商： | PTB20175 |
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1
Description
The 20175 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
PTB 20175
55 Watts, 1.9–2.0 GHz
Cellular Radio RF Power Transistor
20175
LOTCODE
10
20
30
40
50
60
70
2
4
6
8
10
12
14
Input Power (Watts)
O
V
CC
= 26 V
I
CQ
= 0.150 A
f = 2 GHz
Typical Output Power vs. Input Power
Package 20223
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Emitter Voltage
V
CES
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4
Vdc
Collector Current (continuous)
I
C
8
Adc
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
P
D
233
1.33
W
W/°C
Storage Temperature Range
Tstg
–40 to +150
°C
Thermal Resistance (Tflange = 70° C)
R
θ
JC
.75
°C/W
55 Watts, 1.9–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 55 Watts
Gold Metallization
Silicon Nitride Passivated
9/28/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20176 | 5 Watts, 1.78-1.92 GHz RF Power Transistor |
| PTB20177 | 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20179 | 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20180 | 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20187 | 4 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20176 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:5 Watts, 1.78-1.92 GHz RF Power Transistor |
| PTB20177 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20179 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20180 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20187 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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