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參數(shù)資料
| 型號： | PTB20174 |
| 廠商： | ERICSSON |
| 英文描述： | 90 Watts, 1400-1600 MHz RF Power Transistor |
| 中文描述： | 90瓦，1400-1600 MHz射頻功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 563K |
| 代理商： | PTB20174 |
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1
PTB 20174
90 Watts, 1400–1600 MHz
RF Power Transistor
20174
LOTCODE
0
20
40
60
80
100
120
0
5
10
15
20
Input Power (Watts)
O
30
40
50
60
70
80
90
E
V
CC
= 26 V
I
CQ
= 250 mA Total
f = 1490 MHz
Typical Output Power and Efficiency vs. Input Power
Package 20224
Description
The 20174 is an NPN, common emitter RF power transistor intended
for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Class AB Characteristics
Specified 26 Volts, 1490 MHz
- Output Power = 90 Watts
- IMD at 90 Watts = -28 dBc max.
- Gain at 90 Watts = 7.5 dB min.
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage (collector shorted)
V
CES
52
Vdc
Collector-Base Voltage (emitter open)
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
15
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
290
1.67
Watts
W/°C
Storage Temperature
T
STG
150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
0.6
°C/W
9/28/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20175 | 55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20176 | 5 Watts, 1.78-1.92 GHz RF Power Transistor |
| PTB20177 | 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20179 | 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20180 | 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20175 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20176 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:5 Watts, 1.78-1.92 GHz RF Power Transistor |
| PTB20177 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20179 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20180 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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