參數(shù)資料
型號： PTB20167
廠商： ERICSSON
英文描述： 60 Watts, 850-960 MHz RF Power Transistor
中文描述： 60瓦，850-960 MHz射頻功率晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 47K
代理商： PTB20167
e
1
Typical Output Power vs. Input Power
30
35
40
45
50
55
60
65
70
6
7
8
9
10
11
12
Input Power (Watts)
O
V
CC
= 24 V
f = 905 MHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
30
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
175
1
Watts
W/°C
Storage Temperature Range
T
STG
R
θ
JC
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
1
°C/W
PTB 20167
60 Watts, 850–960 MHz
RF Power Transistor
Description
The 20167 is an NPN, common base RF power transistor intended
for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum
output power, it is specifically designed for class C power amplifier
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20200
20167
LOT CODE
24 Volt, 905 MHz Common Base Characteristics
- Output Power = 60 W
- Power Gain = 7.0 dB Min
- Efficiency = 60% Min
Double Input/Output Matched for Wideband
Performance
Gold Metallization
Silicon Nitride Passivated
9/28/98
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