參數(shù)資料
型號(hào)： PSMN063-150
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field-effect transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 9/12頁(yè)
文件大?。?/td> 279K
代理商： PSMN063-150
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 31 October 2001
9 of 12
9397 750 08594
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
6.
Package outline
Fig 15. SOT428 (D-PAK).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
TO-252
SC-63
98-04-07
99-09-13
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
w
A
M
b
c
b1
L1
L
1
3
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
max.
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
min.
e
e1
L1
min.
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
6.47
4.0
2.95
2.55
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN063-150D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN063-150D /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN063-150D,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN069-100YS 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V17ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):56.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes
PSMN069-100YS,115 功能描述:MOSFET Single NChannel 100V 68A 56W 130mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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