參數(shù)資料
型號： PSMN063-150
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field-effect transistor
中文描述： N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù)： 5/12頁
文件大小： 279K
代理商： PSMN063-150
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 31 October 2001
5 of 12
9397 750 08594
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
150
133
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 150 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 15 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
3
4
6
V
V
V
I
DSS
drain-source leakage current
0.05
0.02
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
60
63
176
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
turn-on rise time
t
d(off)
turn-off delay time
t
f
turn-off fall time
Source-drain diode
V
SD
source-drain (diode forward)
voltage
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 30 A; V
DS
= 120 V;
V
GS
= 10 V;
Figure 14
55
10
20
2390
240
98
14
50
48
38
27
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 75 V; R
D
= 2.7
;
V
GS
= 10 V; R
G
= 5.6
I
S
= 25 A; V
GS
= 0 V;
Figure 13
I
S
= 20 A;
dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
DS
= 25 V
0.9
1.2
V
105
0.55
ns
μ
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN063-150D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN063-150D /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN063-150D,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN069-100YS 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V17ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):56.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes
PSMN069-100YS,115 功能描述:MOSFET Single NChannel 100V 68A 56W 130mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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