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| 型號(hào)： | PSMN063-150 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 279K |
| 代理商： | PSMN063-150 |
Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 31 October 2001
Document order number: 9397 750 08594
Contents
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN063-150D | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET |
| PSMN063-150D /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN063-150D,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN069-100YS | 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V17ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):56.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes |
| PSMN069-100YS,115 | 功能描述:MOSFET Single NChannel 100V 68A 56W 130mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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