參數(shù)資料
型號: PSMN063-150
廠商: NXP Semiconductors N.V.
英文描述: N-channel enhancement mode field-effect transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 8/12頁
文件大?。?/td> 279K
代理商: PSMN063-150
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 31 October 2001
8 of 12
9397 750 08594
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 30 A; V
DD
= 30 V and 120 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
IS
(A)
VSD (V)
0.4
0
0.8
1.2
Tj = 175 oC
Tj = 25 oC
0
10
20
30
003aaa156
0
4
8
12
VGS
(V)
0
20
40
60
QG (nC)
VDD = 30 V
VDD = 120 V
003aaa155
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