參數(shù)資料
型號(hào)： PSMN005-55P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level TrenchMOS transistor(N溝道邏輯電平 TrenchMOS晶體管)
中文描述： 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 2/12頁
文件大小： 113K
代理商： PSMN005-55P
October 1999
2
Rev 1.200
Philips Semiconductors
Product specification
PSMN005-55B;
PSMN005-55P
N-channel logic level TrenchMOS
(TM)
transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Low thermal resistance
I
D
= 75 A
R
DS(ON)
≤
5.8 m
(V
GS
= 10 V)
R
DS(ON)
≤
6.3 m
(V
GS
= 5 V)
GENERAL DESCRIPTION
SiliconMAX
products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PSMN005-55P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN005-55B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
V
DGR
V
GS
Drain-source voltage
Drain-gate voltage
Continuous gate-source
voltage
Peak pulsed gate-source
voltage
Continuous drain current
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
-
-
-
55
55
±
15
V
V
V
V
GSM
T
j
≤
150 C
-
±
20
V
I
D
T
mb
= 25 C; V
GS
= 5 V
T
mb
= 100 C; V
GS
= 5 V
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
75
2
75
2
240
230
175
A
A
A
W
C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
- 55
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
2
maximum current limited by package
相關(guān)PDF資料
PDF描述
PSMN010-55D N-channel logic level TrenchMOS transistor(N溝道邏輯電平 TrenchMOS晶體管)
PSMN020-150W N-channel TrenchMOS transistor(N溝道 TrenchMOS晶體管)
PSMN038 N-channel enhancement mode field-effect transistor
PSMN040-200W N-channel TrenchMOS transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN005-55P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-75B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
PSMN005-75B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-75B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-75P 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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