型號: | PSMN005-55P |
廠商: | NXP SEMICONDUCTORS |
元件分類: | JFETs |
英文描述: | N-channel logic level TrenchMOS transistor(N溝道邏輯電平 TrenchMOS晶體管) |
中文描述: | 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
封裝: | PLASTIC, TO-220AB, 3 PIN |
文件頁數(shù): | 1/12頁 |
文件大?。?/td> | 113K |
代理商: | PSMN005-55P |
相關PDF資料 |
PDF描述 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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PSMN005-55P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN005-75B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. |
PSMN005-75B /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN005-75B,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN005-75P | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |