參數(shù)資料
型號: PSD503B1
英文描述: Field Programmable Microcontroller Peripherals(可編程邏輯,16K位SRAM,40個可編程I/O,通用PLD有61個輸入)
中文描述: 現(xiàn)場可編程微控制器外圍設備(可編程邏輯,16K的位的SRAM,40余個可編程輸入/輸出,通用PLD的有61個輸入)
文件頁數(shù): 50/130頁
文件大小: 704K
代理商: PSD503B1
PSD5XX Famly
6-50
The PSD5XX provides EPROM memory for code storage and SRAM memory for scratch
pad usage. Chip selects for the memory blocks come from the DPLD decoding logic and are
defined by the user in the PSDsoft Software. Figure 25 shows the organization of the
Memory Block.
EPROM
The PSD5XX provides three EPROM densities: 256K bit, 512K bit or 1M bit. The EPROM
is divided into four 8K, 16K or 32K byte blocks. Each block has its own chip select signals
(ES0 – ES3). The EPROM can be configured as 32K x 8, 64K x 8 or 128K x 8 for
microcontrollers with an 8-bit data bus. For 16-bit data buses, the EPROM is configured as
16K x 16, 32K x 16 or 64K x 16.
SRAM
The SRAM has 16K bits of memory, organized as 2K x 8 or 1K x 16. The SRAM is enabled
by the chip select signal RS0 from the DPLD. The SRAM has a battery back-up (STBY)
mode. This back-up mode is invoked when the V
CC
voltage drops under the VSTBY voltage
by 0.6 V. The VSTBY voltage is connected only to the SRAM and cannot be lower than
2.7 volts. The SRAM Data Retention voltage is 2 volts.
Memory Select Map
The EPROM and SRAM chip select equations are defined in the ABEL file in terms of
address and other DPLD inputs. The memory space for the EPROM chip select
(ES0 – ES3) should not be larger than the EPROM block (8KB, 16KB or 32KB) it is
selecting.
The following rules govern how the internal PSD5XX memory selects/space are defined:
J
The EPROM blocks address space cannot overlap
J
SRAM, internal I/O and Peripheral I/O space cannot overlap
J
SRAM, internal I/O and Peripheral I/O space can overlap EPROM space, with priority
given to SRAM or I/O. The portion of EPROM which is overlapped cannot be accessed.
The Peripheral I/O space refers to memory space occupied by peripherals when Port A is
configured in the Peripheral I/O Mode.
Memory
Block
相關PDF資料
PDF描述
PSD502B1-12U 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7250 with optional Total Dose Rating of 1000kRads
PSD502B1-12UI 250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package; A IRHM57264SE with Standard Packaging
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PSD502B1-15JI 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package; Similar to IRHY57Z30CM with optional Total Dose Rating of 300kRads
PSD502B1-15LI 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package; A IRHY57Z30CM with Standard Packaging
相關代理商/技術參數(shù)
參數(shù)描述
PSD503B1-12J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral
PSD503B1-12JI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral
PSD503B1-12LI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral
PSD503B1-12U 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral
PSD503B1-12UI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral