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參數(shù)資料
| 型號： | PM75RSK060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 470UF 20% 35V RAD |
| 中文描述： | 用智能功率模塊 |
| 文件頁數(shù)： | 3/31頁 |
| 文件大小： | 925K |
| 代理商： | PM75RSK060 |
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Sep.1998
6.1.2 Ceramic Isolation Con-
struction
Higher power IPMs are constructed
using ceramic isolation material. A
direct bond copper process in
which copper patterns are bonded
directly to the ceramic substrate
without the use of solder is used in
these modules. This substrate pro-
vides the improved thermal charac-
teristics and greater current carry-
ing capabilities that are needed in
these higher power devices. Gate
drive and control circuits are con-
tained on a separate PCB mounted
directly above the power devices.
The PCB is a multilayer construc-
tion with special shield layers for
EMI noise immunity. Figure 6.4
shows the structure of a ceramic
isolated Intelligent Power Module.
Figure 6.5 is a PM75RSA060 75 A,
600V IPM.
Figure 6.4 Ceramic Isolation Construction
Figure 6.5 PM75RSA060
SILICON CHIP
DBC PLATE
BASE
PLATE
SILICON GEL
CASE
MAIN
TERMINAL
EPOXY
RESIN
GUIDE
PIN
INPUT SIGNAL
TERMINAL
INTERCONNECT
TERMINAL
ELECTRODE
ALUMINUM WIRE
SHIELD
LAYER
RESISTOR
CONTROL BOARD
PCB
SHIELD
LAYER
SIGNAL
TRACE
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
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