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參數(shù)資料
| 型號： | PN2222 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistors NPN Silicon(NPN通用晶體管) |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 202K |
| 代理商： | PN2222 |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
PN2222/D
PN2222, PN2222A
PN2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
Features
Pb
Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
PN2222
PN2222A
V
CEO
30
40
Vdc
Collector-Base Voltage
PN2222
PN2222A
V
CBO
60
75
Vdc
Emitter-Base Voltage
PN2222
PN2222A
V
EBO
5.0
6.0
Vdc
Collector Current
Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
R
JA
200
°
C/W
Thermal Resistance,
Junction-to-Case
R
JC
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
2
BASE
1
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
PN222
x
A
Y
WW
= Device Code
= A or 2
= Assembly Location
= Year
= Work Week
= Pb
Free Package
(Note: Microdot may be in either location)
TO
92
CASE 29
11
1
23
MARKING
DIAGRAM
PN
222x
AYWW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PN2222/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Switching Transistors |
| PN2222/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General Purpose Transistors |
| PN2222_D11Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN2222_J18Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN2222_J61Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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