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參數(shù)資料
| 型號： | PM75RSK060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 470UF 20% 35V RAD |
| 中文描述： | 用智能功率模塊 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大?。?/td> | 925K |
| 代理商： | PM75RSK060 |
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Sep.1998
the effect of the controlled shut-
down (for obtaining the oscillo-
graph in “A”
the internal soft shutdown was in-
tentionally deactivated). The IPM
uses actual device current mea-
surement to detect all types of over
current conditions. Even resistive
and inductive shorts to ground that
are often missed by conventional
desaturation and bus current sens-
ing protection schemes will be de-
tected by the IPMs current sense
IGBTs.
Note:
V-Series IPMs do not have an
over- current protection function.
Instead a unified short circuit pro-
tection function that has a delay
like the over current protection de-
scribed in this section is used.
NORMAL OPERATION
FWD RECOVERY CURRENT
IGNORED BY OC PROTECTION
OVER CURRENT
FAULT AND
RECOVERY
SHORT CIRCUIT
FAULT AND
RECOVERY
NORMAL OPERATION
t
FO
t
FO
thold
thold
t
off
(OC)
INPUT
SIGNAL
INTERNAL
GATE
VOLTAGE
(V
GE
)
SHORT CIRCUIT
TRIP LEVEL
OVER CIRCUIT
TRIP LEVEL
COLLECTOR
CURRENT
I
FO
FAULT OUTPUT
CURRENT
Figure 6.17
Operation of Over-Current and Short-Circuit Protection
OC PROTECTION WITHOUT SOFT SHUTDOWN
V
CE (surge)
OC PROTECTION WITH SOFT SHUTDOWN
I
C
V
CE
I
C
V
CE
V
CE (surge)
Figure 6.18
OC Operation of PM200DSA060 (I
C
: 100A/div; 100V/div; t: 1
μ
s/div)
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
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