- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365370 > PM75RSK060 (Mitsubishi Electric Corporation) 470UF 20% 35V RAD PDF資料下載
參數(shù)資料
| 型號： | PM75RSK060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 470UF 20% 35V RAD |
| 中文描述： | 用智能功率模塊 |
| 文件頁數(shù)： | 10/31頁 |
| 文件大小： | 925K |
| 代理商： | PM75RSK060 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
Sep.1998
temperature protection circuit.
The over temperature function pro-
vides effective protection against
overloads and cooling system fail-
ures in most applications. However,
it does not guarantee that the maxi-
mum junction temperature rating of
the IGBT chip will never be ex-
ceeded. In cases of abnormally
high losses such as failure of the
system controller to properly regu-
late current or excessively high
switching frequency it is possible
for IGBT chip to exceed T
j(max)
be-
fore the base plate reaches the OT
trip level.
Caution:
Tripping of the over-temperature
protection is an indication of stress-
ful operation. Repetitive tripping
should be avoided.
6.4.4 Over-Current Protection
The IPM uses current sense IGBT
chips to continuously monitor
power device current. If the current
though the Intelligent Power Mod-
ule exceeds the specified
overcurrent trip level (OC) for a pe-
riod longer than t
off(OC)
the IPMs
internal control circuit will protect
the power device by disabling the
gate drive and generating a fault
output signal. The timing of the
over-current protection is shown in
Figure 6.17. The t
off(OC)
delay is
implemented in order to avoid trip-
ping of the OC protection on short
pulses of current above the OC
level that are not dangerous for the
power device. When an over-cur-
rent is detected a controlled shut-
down is initiated and a fault output
is generated. The controlled shut-
down lowers the turn-off di/dt which
helps to control transient voltages
that can occur during
shut down from high fault currents.
Most Intelligent Modules use the
two step shutdown depicted in Fig-
ure 6.17. In the two step shutdown,
the gate voltage is reduced to an
intermediate voltage causing the
current through the device to drop
slowly to a low level. Then, about
5
μ
s later, the gate voltage is re-
duced to zero completing the shut
down. Some of the large six and
seven pack IPMs use an active
ramp of gate voltage to achieve the
desired reduction in turn off di/dt
under high fault currents. The oscil-
lographs in Figure 6.18 illustrate
Figure 6.15
Operation of Under-Voltage Lockout
INPUT
SIGNAL
BASE PLATE
(Tb)
FAULT OUTPUT
CURRENT
(I
FO
)
INTERNAL
GATE
VOLTAGE
V
GE
OT
OT
r
Figure 6.16
Operation of Over-Temperature
INPUT
SIGNAL
CONTROL
SUPPLY
VOLTAGE
FAULT
OUTPUT
CURRENT
(I
FO
)
INTERNAL
GATE
VOLTAGE
V
GE
CONTROL SUPPLY ON
SHORT
GLITCH
IGNORED
POWER SUPPLY
FAULT AND
RECOVERY
CONTROL SUPPLY OFF
UV
r
UV
t
t
FO
t
dUV
t
FO
t
dUV
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
相關PDF資料 |
PDF描述 |
|---|---|
| PM75RSK060 | Intellimod⑩ Module Three Phase Brake IGBT Inverter Output (75 Amperes/600 Volts) |
| PM800HSA060 | CAP,CERAMIC,47NF ,X7R,10%,50V,0805,SMD |
| PM800HSA120 | FLAT-BASE TYPE INSULATED PACKAGE |
| PN2222 | General Purpose Transistors NPN Silicon(NPN通用晶體管) |
| PN2222A | General Purpose Transistors NPN Silicon(NPN通用晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PM75RVA060 | 功能描述:MOD IPM HF 600V 75A RoHS:是 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM75RVA060_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75RVA060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75-XXXK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMT POWER INDUCTORS |
| PM761 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
發(fā)布緊急采購，3分鐘左右您將得到回復。