參數(shù)資料
型號(hào)： PIC18LF2450T-I/SO
廠商： Microchip Technology
文件頁數(shù)： 124/143頁
文件大?。?/td> 0K
描述： IC PIC MCU FLASH 8KX16 28SOIC
標(biāo)準(zhǔn)包裝： 1,600
系列： PIC® 18F
核心處理器： PIC
芯體尺寸： 8-位
速度： 48MHz
連通性： UART/USART，USB
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，HLVD，POR，PWM，WDT
輸入/輸出數(shù)： 23
程序存儲(chǔ)器容量： 16KB（8K x 16）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 768 x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 10x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 28-SOIC（0.295"，7.50mm 寬）
包裝： 帶卷 (TR)
PIC18F2450/4450
2006 Microchip Technology Inc.
Advance Information
DS39760A-page 79
6.5
Writing to Flash Program Memory
The minimum programming block is 8 words or
16 bytes. Word or byte programming is not supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 16 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte, the
TBLWT
instruction may need to be executed 16 times for
each programming operation. All of the table write oper-
ations will essentially be short writes because only the
holding registers are written. At the end of updating the
16 holding registers, the EECON1 register must be
written to in order to start the programming operation
with a long write.
The long write is necessary for programming the
internal Flash. Instruction execution is halted while in a
long write cycle. The long write will be terminated by
the internal programming timer.
The write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device.
FIGURE 6-5:
TABLE WRITES TO FLASH PROGRAM MEMORY
6.5.1
FLASH PROGRAM MEMORY WRITE
SEQUENCE
The sequence of events for programming an internal
program memory location should be:
1.
Read 64 bytes into RAM.
2.
Update data values in RAM as necessary.
3.
Load Table Pointer register with address being
erased.
4.
Execute the Row Erase procedure.
5.
Load Table Pointer register with address of first
byte being written.
6.
Write 16 bytes into the holding registers with
auto-increment.
7.
Set the EECON1 register for the write operation:
clear the CFGS bit to access program memory;
set WREN to enable byte writes.
8.
Disable interrupts.
9.
Write 55h to EECON2.
10. Write 0AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
2 ms using internal timer).
13. Re-enable interrupts.
14. Repeat steps 6 through 14 once more to write
64 bytes.
15. Verify the memory (table read).
This procedure will require about 8 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 6-3.
Note:
The default value of the holding registers on
device Resets and after write operations is
FFh. A write of FFh to a holding register
does not modify that byte. This means that
individual bytes of program memory may be
modified, provided that the change does not
attempt to change any bit from a ‘0’ to a ‘1’.
When modifying individual bytes, it is not
necessary to load all 16 holding registers
before executing a write operation.
TBLPTR = xxxxxF
TBLPTR = xxxxx1
TBLPTR = xxxxx0
TBLPTR = xxxxx2
Program Memory
Holding Register
8
TABLAT
Write Register
Note:
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 16 bytes in
the holding register.
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