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參數(shù)資料
| 型號： | PIC16LCE625T-04I/SO |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 94/100頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU CMOS 2K OTP W/EEPRM18SOIC |
| 標準包裝： | 1,100 |
| 系列： | PIC® 16C |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 4MHz |
| 外圍設備： | 欠壓檢測/復位，POR，WDT |
| 輸入/輸出數(shù)： | 13 |
| 程序存儲器容量： | 3.5KB（2K x 14） |
| 程序存儲器類型： | OTP |
| EEPROM 大小： | 128 x 8 |
| RAM 容量： | 128 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.5 V ~ 5.5 V |
| 振蕩器型： | 外部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 18-SOIC（0.295"，7.50mm 寬） |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | PIC16LCE625T04ISO |
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1999 Microchip Technology Inc.
DS40182C-page 83
PIC16CE62X
13.0
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Ambient Temperature under bias .............................................................................................................. -40
° to +125°C
Storage Temperature ................................................................................................................................ -65
° to +150°C
Voltage on any pin with respect to VSS (except VDD and MCLR)........................................................-0.6V to VDD +0.6V
Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.0V
Voltage on RA4 with respect to VSS........................................................................................................................... 8.5V
Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V
Voltage on RA4 with respect to VSS........................................................................................................................... 8.5V
Total power Dissipation (Note 1) ............................................................................................................................... 1.0W
Maximum Current out of VSS pin........................................................................................................................... 300 mA
Maximum Current into VDD pin ............................................................................................................................. 250 mA
Input Clamp Current, IIK (VI <0 or VI> VDD)
...................................................................................................................... ±20 mA
Output Clamp Current, IOK (VO <0 or VO>VDD)
................................................................................................................ ±20 mA
Maximum Output Current sunk by any I/O pin ........................................................................................................ 25 mA
Maximum Output Current sourced by any I/O pin ................................................................................................... 25 mA
Maximum Current sunk by PORTA and PORTB ...................................................................................................200 mA
Maximum Current sourced by PORTA and PORTB .............................................................................................. 200 mA
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100 should be used when applying a "low" level to the MCLR pin rather than pulling
this pin directly to VSS.
NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
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