參數(shù)資料
型號： PIC16F819
廠商： Microchip Technology Inc.
英文描述： 18/20-Pin Enhanced FLASH Microcontrollers with nanoWatt Technology(18/20引腳，納瓦技術(shù)增強(qiáng)FLASH微控制器)
中文描述： 18/20-Pin增強(qiáng)型閃存微控制器采用納瓦技術(shù)（18/20引腳，納瓦技術(shù)增強(qiáng)閃存微控制器）
文件頁數(shù)： 34/164頁
文件大?。?/td> 3045K
代理商： PIC16F819
PIC16F818/819
DS39598C-page 32
Preliminary
2002 Microchip Technology Inc.
3.8
Protection Against Spurious Write
There are conditions when the device should not write
to the data EEPROM memory. To protect against spu-
rious EEPROM writes, various mechanisms have been
built-in. On power-up, WREN is cleared. Also, the
Power-up Timer (72 ms duration) prevents an
EEPROM write.
The write initiate sequence and the WREN bit together,
help prevent an accidental write during brown-out,
power glitch, or software malfunction.
3.9
Operation During Code Protect
When the data EEPROM is code protected, the micro-
controller can read and write to the EEPROM normally.
However, all external access to the EEPROM is dis-
abled. External write access to the program memory is
also disabled.
When program memory is code protected, the micro-
controller can read and write to program memory nor-
mally, as well as execute instructions. Writes by the
device may be selectively inhibited to regions of the
memory, depending on the setting of bits WRT1:WRT0
of the configuration word (see Section 12.1 for addi-
tional information). External access to the memory is
also disabled.
TABLE 3-1:
REGISTERS/BITS ASSOCIATED WITH DATA EEPROM AND
FLASH PROGRAM MEMORIES
Address
Name
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Value on
Power-on
Reset
Value on
all other
RESETS
10Ch
EEDATA
EEPROM/FLASH Data Register Low Byte
xxxx xxxx uuuu uuuu
10Dh
EEADR
EEPROM/FLASH Address Register Low Byte
xxxx xxxx uuuu uuuu
10Eh
EEDATH
—
—
EEPROM/FLASH Data Register High Byte
--xx xxxx --uu uuuu
10Fh
EEADRH
—
—
—
—
—
EEPROM/FLASH Address
Register High Byte
---- -xxx ---- -uuu
18Ch
EECON1 EEPGD
—
—
FREE
WRERR
WREN
WR
RD
x--x x000 x--x q000
18Dh
EECON2 EEPROM Control Register2 (not a physical register)
---- ---- ---- ----
0Dh
PIR2
—
—
—
EEIF
—
—
—
—
---0 ---- ---0 ----
8Dh
PIE2
—
—
—
EEIE
—
—
—
—
---0 ---- ---0 ----
Legend:
x
= unknown,
u
= unchanged,
-
= unimplemented, read as '0',
q
= value depends upon condition.
Shaded cells are not used by Data EEPROM or FLASH Program Memory.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PIC16F819-E/ML 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/P 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/SO 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/SS 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/SSVAO 制造商:Microchip Technology Inc 功能描述:
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