參數(shù)資料
型號： PIC16F819
廠商： Microchip Technology Inc.
英文描述： 18/20-Pin Enhanced FLASH Microcontrollers with nanoWatt Technology(18/20引腳，納瓦技術(shù)增強(qiáng)FLASH微控制器)
中文描述： 18/20-Pin增強(qiáng)型閃存微控制器采用納瓦技術(shù)（18/20引腳，納瓦技術(shù)增強(qiáng)閃存微控制器）
文件頁數(shù)： 32/164頁
文件大?。?/td> 3045K
代理商： PIC16F819
PIC16F818/819
DS39598C-page 30
Preliminary
2002 Microchip Technology Inc.
3.7
Writing to FLASH Program
Memory
FLASH program memory may only be written to if the
destination address is in a segment of memory that is
not write protected, as defined in bits WRT1:WRT0 of
the device configuration word (Register 12-1). FLASH
program memory must be written in four-word blocks.
A block consists of four words with sequential
addresses, with a lower boundary defined by an
address, where EEADR<1:0> =
00
. At the same time,
all block writes to program memory are done as write
only operations. The program memory must first be
erased. The write operation is edge-aligned, and
cannot occur across boundaries.
To write to the program memory, the data must first be
loaded into the buffer registers. There are four 14-bit
buffer registers and they are addressed by the low
2 bits of EEADR.
Loading data into the buffer registers is accomplished
via the EEADR, EEADT, EECON1 and EECON2
registers as follows:
Set EECON1 PGD, and WREN
Write address to EEADRH:EEADR
Write data to EEDATA:EEDATH
Write 55, AA to EECON2
Set WR bit in EECON1
There are 4 buffer register words and all four locations
MUST
be written to with correct data.
After
EEADR =
xxxxxx11
, then a short write will occur. This
short write only transfers the data to the buffer register.
The WR bit will be cleared in hardware after 1 cycle.
The core will not halt and there will be no EEWHLT
signal generated.
the
“
BSF
EECON1,WR
”
instruction,
if
After
EEADR =
xxxxxx11
, then a long write will occur. This
will
simultaneously
transfer
EEDATH:EEDATA to the buffer registers and begin the
write of all four words. The processor will execute the
next instruction and then ignore the subsequent
instruction. The user should place
NOP
instructions into
the second words. The processor will then halt internal
operations for typically 2 msec in which the write takes
place. This is not a SLEEP mode, as the clocks and
peripherals will continue to run. After the write cycle,
the processor will resume operation with the 3rd
instruction after the EECON1 write instruction.
the
“
BSF
EECON1,WR
”
instruction,
if
the
data
from
After each long write, the 4 buffer registers will be reset
to 3FFF.
FIGURE 3-1:
BLOCK WRITES TO FLASH PROGRAM MEMORY
14
14
14
14
Program Memory
Buffer Register
EEADR<1:0>
= ‘
00
’
Buffer Register
EEADR<1:0>
= ‘
01
’
Buffer Register
EEADR<1:0>
= ‘
10
’
Buffer Register
EEADR<1:0>
= ‘
11
’
EEDATA
EEDATH
7
5
0 7
0
6
8
First word of block
to be written
All buffers are
to FLASH
automatically
after this word
is written
transferred
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參數(shù)描述
PIC16F819-E/ML 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/P 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/SO 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/SS 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC16F819-E/SSVAO 制造商:Microchip Technology Inc 功能描述:
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